Definition of high precision patterns and structures on wafer, using lithography, is obtained with two main equipment:

ELECTRON BEAM VECTOR HB6 HR

Defines submicron and deep submicron process features definitions with the following reference parameters:

  • This system is able to define submicron and deep submicron patterns and structures with the following reference parameters:
    • Thermal Field Emission (TFE) electron gun
    • High energy column (max 100kV)
    • 25 MHz pattern generator
    • 18 bits beam deflection
    • Minimun beam spot size
    • Maximum field size 0.524mm @100kV, 0.819mm @50kV Laser interferometer stage positioning correction
    • Laser height measurement on substrate
    • 32 levels dose assignment
    • Temperature & mechanical vibration control
    • Minimum linewidth: 30 nm ±20% (100μm field size @100keV)
    • Stitching and overlay accuracy: ≤40 nm mean+3 sigma (500μm field size @100keV)
    • 12-wafer air-lock capacity
    • Piece-parts to 8’’ wafers, 6’’ mask capability

 

KARL SUSS MA6 BA6

This machine defines large patterns >0,7 µm and uses optical exposure system with tool set at 365 nm and has a guaranteed resolution of 0,7 µm. The system has the process capability to align front to back wafer surface with alignment accuracy  ≤+/-1.5 µm